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Heat -Dissipation Ceramic Substrate

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Show Details

General Specification and Process Capability

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Substrate

Via Hole

Adhesion / Seed Layer

Functional / Conductive Layer

Barrier / Bonding Layer

Passivation Layer

Al2O3
17 - 27 W/mK
Up to 4.5"

50 - 200 um

Ti / Cu

Electroplating Cu
5 - 100 um in thickness

Electroplating Cu
5 - 100 um in thickness

Solder Mask
25 - 30 um in thickness

TiW / Ti / Cu

Electroplating Au
0.1 - 5.0 um in thickness

Electroless Ag
0.1 - 1.0 um in thickness

Polyimide
3 - 8 um in thickness

AlN
170 - 220 W/mK
Up to 4.5"

Cr / Cu

Printing Ag
10 um in thickness

Electroplating Ni / Au
3 - 9 um / 0.5 - 1.5 um in thickness

SU-8
2 - 10 um in thickness

Printing Cu
10 um in thickness

Electroplating Ni / Ag
3 - 9 um / 3.0 um in thickness